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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3416 description high collector-emitter breakdown voltage- v (br)ceo = 200v (min) complement to type 2sa1352 applications designed for color tv chroma output, high-voltage driver application s. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 5.0 v i c collector current-continuous 0.1 a i cm collector current-peak 0.2 a collector power dissipation @ t a =25 1.2 p c total power dissipation @ t c =25 5 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3416 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 10 a; i e = 0 200 v v (br)ceo collector-emitter breakdown voltage i c = 1ma; r be = 200 v v (br)ebo emitter-base breakdown voltage i e = 10 a; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 20ma; i b = 2ma 0.6 v v be( sat ) base-emitter saturation voltage i c = 20ma; i b = 2ma 1.0 v i cbo collector cutoff current v cb = 150v; i e = 0 0.1 a i ebo emitter cutoff current v eb = 4v; i c = 0 0.1 a h fe dc current gain i c = 10ma ; v ce = 40v 40 320 f t current-gain?bandwidth product i c = 10ma ; v ce = 30v 70 mhz c ob output capacitance i e = 0; v cb = 30v; f= 1.0mhz 1.7 pf ? h fe classifications c d e f 40-80 60-120 100-200 160-320 isc website www.iscsemi.cn 2 |
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